A first-principles investigation on mechanical and metallic properties of titanium carbides under pressure

The titanium carbides are potential candidates to achieve both high hardness and refractory property. We carried out a structural search for titanium carbides at three pressures of 0 GPa, 30 GPa and 50 GPa. A phase diagram of the Ti-C system at 0 K was obtained by elucidating formation enthalpies as a function of compositions, and their mechanical and metallic properties of titanium carbides were investigated systematically. We also discussed the relation of titanium concentration to the both mechanical and metallic properties of titanium carbides. It has been found that the average valence electron density and tractility improved at higher concentrations of titanium, while the degree of covalent bonding directionality decreased. To this effect, the hardness of titanium carbide decreases as the content of titanium increases. Our results indicated that the titanium content significantly affected the metallic properties of the Ti-C system.     

A Voltage Control Method for a Distributed Line Feeder by means of Multiagent Approach

This paper proposes a method for the coordinated control of power factor by means of a multiagent approach. The proposed multiagent system consists of two types of agent: single feeder agent (F_AG) and bus agent (B_AG). In the proposed system, an F_AG plays as an important role, which decides the power factors of all distributed generators by executing the load flow calculations repeatedly. The voltage control strategies are implemented as the class definition of Java into the system. In order to verify the performance of the proposed method, it has been applied to a typical distribution model system. The simulation results show that the system is able to control very violent fluctuation of the demands and the photovoltaic (PV) generations.     

The control of abnormal grain growth in low-voltage SnO2 varistors by microseed addition

In this research, the addition effects of three different quantities of micron-sized seeds (microseeds) to a SnO₂ varistor prepared from nanomaterials on the microstructure and electrical properties were studied. Moreover, surge-withstanding capability of low-voltage SnO₂ varistors was investigated. The X-ray diffraction pattern disclosed a single phase SnO₂ for microseed grains. The morphological features of samples were characterized using scanning electron microscopy. The abnormal distribution of grain size with elongated grains of SnO₂ in fine grains matrix was observed in sintered samples without microseeds. The low content of microseed addition (0.3 wt%) had not controlled abnormal grain growth, however, it increased mean grain size to 37 µm. Although the high content of microseeds (7.5 wt%) stopped abnormal grain growth, it had a negative effect on relative density and mean grain size. The normal grain size distribution with maximum mean grain size (45 µm) was obtained in samples containing 1.5 wt% microseeds. These samples showed the lowest breakdown field (240 V/cm) and the highest surge-withstanding capability (1.5 kA/cm²). Furthermore, the standard deviation of the electrical parameters of these samples was improved due to normal grain-size distribution.     

Estimation of power density in IMPATT using different materials

ABSTRACT

The RF output power dissipated per unit area is calculated using Runge-Kutta method for the high-moderate-moderate-high (n⁺-n-p-p⁺) doping profile of double drift region (DDR)-based impact avalanche transit time (IMPATT) diode by taking different substrate at Ka band. Those substrates are silicon, gallium arsenide, germanium, wurtzite gallium nitride, indium phosphide and 4H-silicon carbide. A comparative study regarding power dissipation ability by the IMPATT using different material is being presented thereby modelling the DDR IMPATT diode in a one-dimensional structure. The IMPATT based on 4H-SiC element has highest power density in the order of 10¹⁰ Wm^?2 and the Si-based counterpart has lowest power density of order 10⁶ Wm^?2 throughout the Ka band. So, 4H-SiC-based IMPATT should be preferable over others for the power density preference based application. This result will be helpful to estimate the power density of the IMPATT for any doping profile and to select the proper element for the optimum design of the IMPATT as far as power density is concerned in the Ka band. Also, we have focused on variation of power density with different junction temperatures and modelled the heat sink with analysis of thermal resistances.     

Computer‐aided design methodology for linearity enhancement of multiwatt GaN HEMT amplifiers using multiple parallel devices

This article presents a design methodology for linearizing GaN HEMT amplifiers based on splitting a large FET into multiple parallel FETs with same total gate periphery and by biasing them individually. By varying the biases, the magnitude and the phase of the IMD3 components at the output of FET changes. A detailed simulation methodology using commercial microwave CAD software is presented. Simulation results show that by biasing one device in Class AB and other(s) in deep Class AB mode, IMD3 components of parallel FETs can be made out of phase to each other leading to cancellation and improvement in linearity. Three prototype circuits were simulated using (a) a single 5 mm FET (1 × 5 mm), (b) two parallel 2.5 mm FETs (2 × 2.5 mm), and (c) four parallel 1.25 mm FETs (4 × 1.25 mm), for a total gate periphery of 5 mm, over the frequency range of 0.8 to 1.0 GHz. IMD3 improvement up to 20 dBc was achieved with the 4 × 1.25 mm circuit when the FET biases were optimized. Measurement results show improvement in linearity up to 20 dBc for 4 × 1.25 mm circuit. The proposed method improves linearity without a substantial penalty on the power consumption and is straightforward to implement.     

退火温度对新型锆合金薄板带材析出相和织构的影响

采用扫描电镜和超高分辨透射电镜,对具有良好冲制性能的新型锆合金薄板成品带材进行含晶粒、第二相粒子等在内的显微组织研究,并探索真空退火处理条件下温度对带材显微组织的影响。结果显示:新型锆合金薄板成品带材晶粒平均尺寸2.17 μm,存在{0001}<1010>和{0001}<1120>两种织构,大部分晶粒<1120>平行带材RD方向,较少晶粒<1010>平行带材RD方向;第二相粒子分布在晶粒内部及晶界,平均尺寸114 nm,尺寸较大的为不规则椭圆形的Zr-Nb-Fe相,尺寸较小的为圆形的β-Nb相;热处理退火温度降低,带材晶粒尺寸减小,第二相粒子细小弥散分布;新型锆合金薄板成品带材良好冲制性能主要源于轧制积累应变诱发再结晶过程进行充分,导致晶粒细小及孪晶发生破碎;相对轧制变形,退火对带材冲制性能影响不显著。     

Design,Synthesis, and in vitro Evaluation of P2X7 Antagonists

The P2X7 receptor is a promising target for the treatment of various diseases due to its significant role in inflammation and immune cell signaling. This work describes the design, synthesis, and in vitro evaluation of a series of novel derivatives bearing diverse scaffolds as potent P2X7 antagonists. Our approach was based on structural modifications of reported (adamantan-1-yl)methylbenzamides able to inhibit the receptor activation. The adamantane moieties and the amide bond were replaced, and the replacements were evaluated by a ligand-based pharmacophore model. The antagonistic potency of the synthesized analogues was assessed by two-electrode voltage clamp experiments, using Xenopus laevis oocytes that express the human P2X7 receptor. SAR studies suggested that the replacement of the adamantane ring by an aryl-cyclohexyl moiety afforded the most potent antagonists against the activation of the P2X7 cation channel, with analogue 2-chloro-N-[1-(3-(nitrooxymethyl)phenyl)cyclohexyl)methyl]benzamide ( 56 ) exhibiting the best potency with an IC₅₀ value of 0.39 μM.     

Adsorption isotherm and kinetic modeling of a novel procedure for physical modification of silica gel using aqueous solutions of 4,4′-(1,2-ethanediyldinitrilo)bis-(2-pentanone) for preconcentration of Ni(II) ion

ABSTRACT

Aqueous solutions of 4,4′-(1,2-ethanediyldinitrilo)bis-(2-pentanone) (EDDBP) have been used in a novel green procedure for the physical modification of silica gel (SG) for solid-phase extraction and preconcentration of Ni(II) ion. Optimization experiments were carried out at 301 ± 1 K by batch technique. The EDDBP-modified SG was characterized using X-ray Diffraction Spectroscopy (XRD) and Brunaeur-Emmett-Teller (BET) determinations. The adsorption isotherm and kinetic models indicated a physisorption process. The modified SG showed moderate to high adsorption capacity values for Ni(II) ion (~98% removal efficiency) at pH 8. A sorption mechanism for Ni(II) chelation with EDDBP-modified-SG was proposed. These results suggest the procedure has advantages.     

Three-phase four-wire shunt active power filter based on the SOGI filter and Lyapunov function for DC bus control

The three-phase four-wire shunt active power filter (SAPF) was developed to suppress the harmonic currents generated by nonlinear loads, and for the compensation of unbalanced nonlinear load currents, reactive power, and the harmonic neutral current. In this work, we consider instantaneous reactive power theory (PQ theory) for reference current identification based on the following two algorithms: the classic low-pass filter (LPF) and the second-order generalized integrator (SOGI) filter. Furthermore, since an important process in SAPF control is the regulation of the DC bus voltage at the capacitor, a new controller based on the Lyapunov function is also proposed. A complete simulation of the resultant active filtering system confirms its validity, which uses the SOGI filter to extract the reference currents from the distorted line currents, compared with the traditional PQ theory based on LPF. In addition, the simulation performed also demonstrates the superiority of the proposed approach, for DC bus voltage control based on the Lyapunov function, compared with the traditional proportional-integral (PI) controller. Both novel approaches contribute towards an improvement in the overall performance of the system, which consists of a small rise and settling time, a very low or nonexistent overshoot, and the minimization of the total harmonic distortion (THD).     

机加工孔套管抗挤压强度有限元分析

套管屈服强度直接影响套管抗挤压性能，套管在加工孔过程中可能诱发孔眼附近材料发生金属相变，导致套管屈服强度不再均匀分布，进而影响套管抗挤压强度。在相同工况下，对比了P110完整套管和机加工孔套管的抗挤压强度，以此为参照组分析了相变区域面积和相变区域屈服强度对机加工孔套管抗挤压强度的影响。结果表明，机加工孔会改变材料屈服强度，进而影响套管抗挤压性能。随金属相变区域屈服强度减小，机加工孔套管抗挤压强度减弱；当金属相变区域屈服强度增大时，机加工孔套管抗挤压强度增强。且机加工孔套管相变区域面积对机加工孔套管抗挤压强度的影响随相变区域屈服强度增加而逐渐削弱。